In this paper, we modeled and simulated two tandem solar cell structures (a) and (b), in a two-terminal configuration based on inorganic and lead-free absorber materials. The structures are composed of sub-cells already studied in our previous work, where we simulated the impact of defect density and recombination rate at the interfaces, as well as that of the thicknesses of the charge transport and absorber layers, on the photovoltaic performance. We also studied the performance resulting from the use of different materials for the electron and hole transport layers. The two structures studied include a bottom cell based on the perovskite material CsSnI₃ with a band gap energy of 1.3 eV and a thickness of 1.5 µm. The first structure has an upper sub-cell based on the CsSnGeI₃ material with an energy of 1.5 eV, while the second has an upper sub-cell made of Cs₂TiBr₆ with a band gap energy of 1.6 eV. The theoretical model used to evaluate the photocurrent density, current-voltage characteristic, and photovoltaic parameters of the constituent sub-cells and the tandem device was described. Current matching analysis was performed to find the ideal combination of absorber thicknesses that allows the same current density to be shared. An efficiency of 29.8% was obtained with a short circuit current density J_sc = 19.92 mA/cm², an open circuit potential V_oc = 1.46 V and a form factor FF = 91.5% with the first structure (a), for a top absorber thickness of CsSnGeI₃ of 190 nm, while an efficiency of 26.8% with J_sc = 16.74, V_oc = 1.50 V and FF = 91.4% was obtained with the second structure (b), for a top absorber thickness of Cs₂TiBr₆ of 300 nm. The objective of this study is to develop efficient, low-cost, stable and non-toxic tandem devices based on lead-free and inorganic perovskite.